Contact Aligner (Photolithography)

contact_litho_01Contact Mask Aligner

Suss Microtec MJB4 

Manual mask alignment and exposure

Sample size: 1 to 4 wafer/substrate, thickness: up to 4 mm.

Mask Size 2 x 2 to 5 x 5. Mask thickness: up to 4.8 mm.

350 W Hg lamp source (i line exposures)

Constant intensity power supply

Hard contact, soft contact and vacuum contact print modes